缅北禁地

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Professor Anthony O'Neill

Siemens Professor of Microelectronics

  • Telephone: +44 (0) 191 208 7328
  • Address: Electrical and Electronic Engineering
    School of Engineering
    Merz Court (E4.31)
    缅北禁地
    缅北禁地 upon Tyne
    NE1 7RU, UK
Background

Anthony O'Neill joined 缅北禁地 in 1986, having previously worked at Plessey Research (Caswell) Ltd. He has been Siemens Professor of Microelectronics since 1996. In 1994 he was Visiting Scientist at MIT, Cambridge, Ma, USA. In 2002 He became Royal Society Industry Fellow at Atmel, UK. He was a Visiting Professor at EPFL, Lausanne, Switzerland in 2009 and at Monash University, Melbourne, Australia in 2017.

Roles and Responsibilities

*  Director of Research, Electrical and Electronic Engineering
*  Director of nanoLAB University Research Centre
*  Leader of eFutures network for electronics research in UK universities, with ~300 members
*  Principal Investigator on EPSRC Projects:  
          -   eFutures
          -   eFuturesXD
          -   Atomic Layer Interface Engineering for Nanoelectronics (ALIEN):contacts
* Joint- Principal Investigator on the Wellcome/EPSRC project
          -   Controlling Abnormal Network Dynamics with Optogenetics (CANDO)
* Co-Investigator on the RCUK projects
          -   EPSRC: Multi-electrode electromyography: developing electrical cross-sectional imaging of skeletal muscle
          -   EPSRC: Underpinning Power Electronics: Devices Theme
          -   MRC/ESPRC: 缅北禁地 Molecular Pathology Node (MICA)
*  Member of EPSRC College
*  Director of NMI, a UK trade organisation for the electronics industry with more than 200 members

Qualifications

BSc, PhD

Memberships

C Eng, Fellow IET, Senior Member IEEE

Research

Anthony is a member of the microsystems group and his profile can be viewed on  

Research Interests

My research involves device fabrication in cleanrooms, specialist electrical and material characterisation, computer simulation (e.g. TCAD) and electronic systems.  Current research topics are:

  • Bioelectronic devices and systems
  • Silicon Carbide MOSFETs
  • Interface engineering and heterogenious integration
  • Ferroelectric materials for nanoelectronics
  • Biomedical engineering
  • Interconnects and nanowires for integrated circuits
  • Strained Silicon: materials, technology and characterisation

Potential PhD Research Projects

  • Silicon Carbide MOSFETs
  • Bioelectronic devices and systems for clinical application
  • Atomic Layer Interface Engineering for Nanoelectronics  
  • Silicon Nanowires: Design, Fabrication and Characterisation
  • Ferroelectrics for nanoelectronics

In more detail:

Atomic Layer Interface Engineering for Nanoelelctronics.

This research considers the prospect of using (i) insulators or (ii) nanoparticles to improve the electrical conductivity of metal/semiconductor contacts. A range of experimental techniques will be used to measure the change in electrical properties brought about by the thin insulator films and the film thickness will be optimised for a range of important semiconductors (with Cambridge University, Analog Devices NPL, CPI.)

Research papers:  ;  

 

Silicon Carbide MOSFETs
Silicon Carbide is a wide band-gap semiconductor with exceptional electrical and other material properties.  While it has been studied for many years and used commercially for high performance devices, it has very poor MOS current carrying capability.  Recent progress in III-V semiconductor MOS devices has suggested a new route to overcoming this challenge. The project will cover design, fabrication and characterisation aspects.  It is closely linked to a major UK initiative funded by EPRSC (UPE) where 缅北禁地 are partners (with Cambridge, Bristol, Warwick) in the device theme.

Research paper:

Bioelectronic devices and systems for clinical applications

Cross-disciplinary research with academic and clinical staff in neuroscience. Examples include:
 (i) Electroceuticals are electronic micro-systems that will replace pharmaceuticals.  The benefit of this is that electroceuticals can offer closed-loop control without side-effects (whereas pharmaceuticals create many side-effects and are open-loop). Electroceuticals will target individual nerve fibres or specific brain circuits to treat an array of conditions. These treatments will modulate the neural impulses controlling the body, repair lost function and restore health. They could, for example, coax insulin from cells to treat diabetes or regulate food intake to treat obesity. PhD projects will be cross-disciplinary and look at novel electronic devices for necessary sensing, actuating, communication, combined with control electronics. Techniques to locate an assembled micro-system in the body are also sought.
(ii) Neurochips are small wearable or implantable electronic circuits for long-term monitoring and manipulation of neural activity. They have multiple applications in basic neuroscience research (e.g. to study the effects of closed-loop stimulation or investigate patterns of brain activity in waking and sleeping states and have potential for clinical translation as neural prostheses. The next step is to develop optoelectronic Neurochips capable of delivering optical stimulation to brain tissue that has been rendered light-sensitive using optogenetic methods. This PhD project will develop a Neurochip to enable scientific studies that exploit technology being developed in the £10M Wellcome-EPSRC Innovative Engineering for Health project CANDO. The project will thus comprise inter-disciplinary training in microelectronics and neurophysiology (with Imperial College, UCL, 缅北禁地 Institute for Neuroscience and NHS Trust Hospitals).(www.cando.ac.uk)

(iii) Needle electromyography (EMG) is an essential diagnostic test in the investigation of patients with peripheral nerve and muscle disease, such as motor neuron disease. We use microfabrication techniques to produce a novel EMG electrode, of similar diameter to a conventional needle, which will record simultaneously from 64 or 128 points along the needle. This will allow the rapid and accurate localisation of each individual muscle fibre within the muscle, in effect producing an electrical cross-sectional image of the muscle. (with 缅北禁地 Institute for Neuroscience and NHS Trust Hospitals);

Research paper: Nature Biomedical Engineering 2022 

Piezoelectric sensor/actuator for smart joint replacements

Working with colleagues in biomechanics and in the medical school, a smart implant is proposed, comprising engineered surface properties for optimal bonding to the host tissue and piezoelectric sensor/actuator to monitor stress and ultrasonic enhancement of osseointegration. The implants will meet demands in the burgeoning personalised implant market.  The project involves growth, processing and charactertisation of piezoelectric electro-mechanical materials.

 

Silicon Nanowires: Design, Fabrication and Characterisation

Develop novel fabrication techniques to make silicon nanowires, e.g. using oxidation combined with etching, together with characterisation and modelling. Devices will be used to study extreme nanoelectronics and can be applied to medical sensors/actuators.  Atomic layer deposition can be used to coat wires to further investigate properties and applications.

Research paper:

 

Ferroelectrics for nanoelectronics

Ferroelectrics have the potential to make a major impact on future electronic technologies and products.  Examples include low power CMOS, tuneable capacitors, and novel memory elements (e.g. memristors). The project covers deposition of thin film ferroelectric films with extensive material and electrical characterisation, through to first principles modelling to understand thin film ferroelectrics and their interfaces.  You will work in one or more of these areas depending on your interests (with ImperialCollege, CPI and Intel).

Research paper:

 



The School website has more information on research degrees and funding.

Teaching

Undergraduate Teaching

Electronic Devices EEE3020, PHY3026

Postgraduate Teaching

Advanced Electronic Devices EEE8018, EEE8123

Publications

  • Articles

    • Dong N, Johnson E, Berlinguer-Palmini R, Zhong H, Dekhoda F, Soltan A, Nikolic K, Grossman N, Gausden J, Bailey R, O'Neill A, Jackson A, Trevelyan A, Degenaar P, Sun X. . IEEE Access 2024, 12, 129160-129172.
    • Zaaimi B, Turnbull M, Hazra A, Wang Y, Gandara C, McLeod F, McDermott EE, Escobedo-Cousin E, Idil AS, Bailey RG, Tardio S, Patel A, Ponon N, Gausden J, Walsh D, Hutchings F, Kaiser M, Cunningham MO, Clowry GJ, LeBeau FEN, Constandinou TG, Baker SN, Donaldson N, Degenaar P, O'Neill A, Trevelyan AJ, Jackson A. . Nature Biomedical Engineering 2023, 7, 559-575.
    • Zaaimi B, Turnbull M, Hazra A, Wang Y, Gandara C, McLeod F, McDermott EE, Escobedo-Cousin E, Shah Idil A, Bailey RG, Tardio S, Patel A, Ponon N, Walsh D, Hutchings F, Kaiser M, Cunningham MO, Clowry GJ, LeBeau FEN, Constandinou TG, Baker SN, Donaldson N, Degenaar P, O'Neill A, Trevelyan AJ, Jackson A. Closed-loop optogenetic control of the dynamics of neural activity in non-human primates. Nature Biomedical Engineering 2023, 7, 559-575.
    • Maitland S, Escobedo-Cousin E, Schofield I, O'Neill A, Baker S, Whittaker R. . Clinical Neurophysiology 2022, 136, 82-92.
    • Zhang G, Neagu D, King PJ, Ramadan S, O'Neill A, Metcalfe IS. . Journal of Membrane Science 2021, 618, 118736.
    • Firfilionis D, Hutchings F, Tamadoni R, Walsh D, Turnbull M, Escobedo-Cousin E, Bailey RG, Gausden J, Patel A, Haci D, Liu Y, LeBeau FEN, Trevelyan A, Constandinou TG, O'Neill A, Kaiser M, Degenaar P, Jackson A. . Frontiers in Neuroscience 2021, 15, 718311.
    • Silveira C, Brunton E, Escobedo-Cousin E, Gupta G, Whittaker R, O'Neill A, Nazarpour K. . IEEE Transactions on Neural Systems and Rehabilitation Engineering 2020, 28(10), 2136-2143.
    • Luo J, Firflionis D, Turnbull M, Xu W, Walsh D, Escobedo-Cousin E, Soltan A, Ramezani R, Liu Y, Bailey R, O'Neill A, Shah Idil A, Donaldson N, Constandinou T, Jackson A, Degenaar P. . IEEE Transactions on Biomedical Engineering 2020, 67(11), 3004-3015.
    • Choong ZJ, Huo D, Ponon N, Savidis R, Degenaar P, O'Neill A. . Materials Science and Engineering C 2020, 110, 110737.
    • Choong ZJ, Huo D, Degenaar P, O'Neill A. . Journal of Manufacturing Processes 2019, 38, 93-103.
    • Choong ZJ, Huo D, Degenaar P, O'Neill A. . Applied Surface Science 2019, 486, 166-178.
    • Urresti J, Arith F, Olsen S, Wright N, ONeill A. . Transactions on Electron Devices 2019, 66(4), 1710-1716.
    • Dehkhoda F, Soltan A, Ponon N, Jackson A, ONeill A, Degenaar P. . Journal of Neural Engineering 2018, 15(2), 026012.
    • Dong N, Berlinguer-Palmini R, Soltan A, Ponon N, O'Neil A, Travelyan A, Maaskant P, Degenaar P, Sun X. . Journal of Biophotonics 2018, 11(10), e201700358.
    • Arith F, Urresti J, Vasilevskiy K, Olsen S, Wright N, O'Neill A. . IEEE Electron Device Letters 2018, 39(4), 564-567.
    • Ganti S, King PJ, Arac E, Dawson K, Heikkila MJ, Quilter JH, Murdoch B, Cumpson PJ, O'Neill A. . ACS Applied Materials and Interfaces 2017, 9(33), 27357-27364.
    • Ramadan S, Kwa K, King P, O'Neill A. . Nanotechnology 2016, 27(42), 425302.
    • Sohal HS, Clowry GJ, Jackson A, O'Neill A, Baker SN. . PLoS One 2016, 11(10), e0165606.
    • Choong Z, Huo D, Degenaar P, O'Neill A. . Proceedings of the Institution of Mechanical Engineering. Part B: Journal of Engineering Manufacture 2016, 230(9), 1756-1764.
    • Sohal HS, Vassilevski K, Jackson A, Baker SN, ONeill A. . Frontiers in Mechanical Engineering 2016, 2(3).
    • Wells GH, Hunt MRC, Hopf T, Vassilevski K, Escobedo-Cousin E, Horsfall AB, Goss JP, O'Neill A. . Journal of Vacuum Science & Technology B 2015, 33(5), 051802.
    • Hopf T, Vassilevski K, Escobedo-Cousin E, King P, Wright NG, O'Neill AG, Horsfall AB, Goss J, Wells G, Hunt M. . Materials Science Forum 2015, 821-823, 937-940.
    • Ponon NK, Appleby DJR, Arac E, King PJ, Ganti S, Kwa KSK, O'Neill A. . Thin Solid Films 2015, 578, 31-37.
    • O'Neill AG. . ECS Transactions 2015, 69(10), 171-177.
    • Sohal HS, Jackson A, Jackson R, Clowry GJ, Vassilevski K, O'Neill A, Baker SN. . Frontiers in Neuroengineering 2014, 7, 10.
    • Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill AG, Horsfall AB, Goss JP. . Materials Science Forum 2014, 778-780, 1162-1165.
    • King PJ, Arac E, Ganti S, Kwa KSK, Ponon N, O'Neill AG. . Applied Physics Letters 2014, 105(5), 052101.
    • Appleby DJR, Ponon NK, Kwa KSK, Ganti S, Hannemann U, Petrov PK, Alford NM, O'Neill AG. . Journal of Applied Physics 2014, 116, 124105.
    • Appleby DJR, Ponon NK, Kwa KSK, Zou B, Petrov PK, Wang T, Alford NM, O'Neill A. . Nano Letters 2014, 14(7), 3864-3868.
    • Hopf T, Vassilevski KV, Escobedo-Cousin E, King PJ, Wright NG, O'Neill AG, Horsfall AB, Goss JP, Wells GH, Hunt MRC. . Journal of Applied Physics 2014, 116(15), 154504.
    • Wells GH, Hopf T, Vassilevski KV, Escobedo-Cousin E, Wright NG, Horsfall AB, Goss JP, O'Neill AG, Hunt MRC. . Applied Physics Letters 2014, 105(19), 193109.
    • Al-Hamadany R, Goss JP, Briddon PR, Mojarad SA, Al-Hadidi M, O'Neill AG, Rayson MJ. . Journal of Applied Physics 2013, 113(2), 024108.
    • Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill A, Horsfall A, Goss J, Cumpson P. . Materials Science Forum 2013, 740-742, 121-124.
    • Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill A, Horsfall A, Goss J, Cumpson PJ. . Journal of Applied Physics 2013, 113(11), 114309.
    • AL-Hamadany R, Goss JP, Briddon PR, Mojarad SA, O'Neill AG, Rayson MJ. . Journal of Applied Physics 2013, 113(22), 224108-1-224108-8.
    • Za'bah NF, Kwa KSK, Bowen L, Mendis B, O'Neill A. . Journal of Applied Physics 2012, 112(2), 024309.
    • Mojarad SA, Goss JP, Kwa KSK, Zhou ZY, Al-Hamadany RAS, Appleby DJR, Ponon NK, O'Neill A. . Applied Physics Letters 2012, 101(17), 173507.
    • Mojarad SA, Goss JP, Kwa KSK, Petrov PK, Zou B, Alford N, O'Neill A. . Journal of Applied Physics 2012, 112(12), 124516.
    • Mojarad SA, Kwa KSK, Goss JP, Zhou Z, Ponon NK, Appleby DJR, Al Hamadany RAS, O'Neill A. . Journal of Applied Physics 2012, 111(1), 014503.
    • Fjer M, Persson S, Escobedo-Cousin E, O'Neill AG. . IEEE Transactions on Electron Devices 2011, 58(12), 4196-4203.
    • Childs P, Ong S, Herbert D, O'Neill A. . International Journal of Modern Physics A 2010, 25(1), 208-216.
    • Alatise OM, Kwa KSK, Olsen SH, O'Neill AG. . Solid-State Electronics 2010, 54(3), 327-335.
    • Persson S, Fjer M, Escobedo-Cousin E, Olsen SH, Malm G, Wang YB, Hellstrom PE, Ostling M, O'Neill AG. . IEEE Transactions on Electron Devices 2010, 57(6), 1243-1252.
    • Alatise OM, Olsen SH, O'Neill AG. . Solid State Electronics 2010, 54(6), 628-634.
    • Wilson C, Volders H, Croes K, Pantouvaki M, Beyer G, Horsfall A, O'Neill A, Tokei Z. . Microelectronic Engineering 2010, 87(3), 398-401.
    • Alatise OM, Olsen SH, O'Neill AG, Majhi P. . Microelectronic Engineering 2010, 87(11), 2196-2199.
    • Agaiby RMB, Olsen SH, Eneman G, Simoen E, Augendre E, O'Neill AG. . IEEE Electron Device Letters 2010, 31(5), 419-421.
    • Wilson CJ, Croes K, Tokei Z, Beyer GP, Gallacher BJ, Bull SJ, Horsfall AB, O'Neill AG. . Thin Solid Films 2010, 519(1), 443-449.
    • Wilson CJ, Croes K, Zhao C, Metzger TH, Zhao L, Beyer GP, Horsfall AB, O'Neill AG, Tokei Z. . Journal of Applied Physics 2009, 106(5), 053524.
    • Wilson CJ, Zhao C, Zhao L, Metzger TH, Tokei Z, Croes K, Pantouvaki M, Beyer GP, Horsfall AB, O'Neill AG. . Applied Physics Letters 2009, 94(18), 181914.
    • Olsen SH, Yan L, Agaiby R, Escobedo-Cousin E, O'Neill AG, Hellström PE, Ostling M, Lyutovich K, Kasper E, Claeys C, Parker EHC. . Microelectronic Engineering 2009, 86(3), 218-223.
    • Nikitina I, Vassilevski K, Horsfall A, Wright N, O'Neill AG, Ray SK, Zekentes K, Johnson CM. . Semiconductor Science and Technology 2009, 24(5), 055006.
    • Alatise OM, Olsen SH, Cowern NEB, O'Neill AG, Majhi P. . IEEE Transactions on Electron Devices 2009, 56(10), 2277-2284.
    • Alatise OM, Kwa KSK, Olsen SH, O'Neill AG. . IEEE Transactions on Electron Devices 2009, 56(12), 3041-3048.
    • Escobedo-Cousin E, Olsen SH, O'Neill AG, Coulson H. . Journal of Physics D: Applied Physics 2009, 42(17), 175306.
    • Wilson CJ, Croes K, Tokei Z, Vereecke B, Beyer GP, O'Neill AG, Horsfall AB. . Applied Physics Express 2009, 2(9), 096503.
    • Wilson CJ, Croes K, Van Cauwenberghe M, Tokei Z, Beyer GP, Horsfall AB, O'Neill AG. . Semiconductor Science and Technology 2009, 24(11), 115018.
    • Yan L, Simoen E, Olsen SH, Akheyar A, Claeys C, O'Neill AG. . Solid-State Electronics 2009, 53(11), 1177-1182.
    • Tsang YL, O'Neill AG, Gallacher BJ, Olsen SH. . IEEE Electron Device Letters 2008, 29(9), 1062-1064.
    • O'Neill AG, Agaiby R, Olsen S, Yang Y, Hellstrom P-E, Ostling M, Oehme M, Lyutovich K, Kasper E, Eneman G, Verheyen P, Loo R, Claeys C, Fiegna C, Sangiorgi E. . Applied Surface Science 2008, 254(19), 6182-6185.
    • Olsen S, Dobrosz P, Agaiby R, Tsang Y, Alatise O, Bull S, O'Neill A, Moselund K, Ionescu A, Majhi P, Buca D, Mantl S, Coulson H. . Materials Science in Semiconductor Processing 2008, 11(5), 271-278.
    • Agaiby RMB, Olsen SH, Dobrosz P, Coulson H, Bull SJ, O'Neill AG. . Journal of Applied Physics 2008, 104(1), 013507.
    • Agaiby R, O'Neill AG, Olsen SH, Eneman G, Verheyen P, Loo R, Claeys C. . IEEE Transactions on Electron Devices 2008, 55(6), 1568-1573.
    • Yan L, Olsen SH, Escobedo-Cousin E, O'Neill AG. . Journal of Applied Physics 2008, 103(9), 094508.
    • Ong SY, Childs PA, Herbert DC, O'Neill AG. . Journal of Applied Physics 2008, 104(8), 083103.
    • Fiegna C, Yang Y, Sangiorgi E, O'Neill AG. . IEEE Transactions on Electron Devices 2008, 55(1), 233-244.
    • Gallacher B, O'Neill A, Bull S, Wilson C, Horsfall A. . IEEE Transactions on Device and Materials Reliability 2008, 8(1), 174-181.
    • Escobedo-Cousin E, Olsen SH, Dobrosz P, Bull SJ, O'Neill AG, Coulson H, Claeys C, Loo R, Delhougne R, Caymax M. . Journal of Applied Physics 2007, 102(12), -.
    • Agaiby R, Yang Y, Olsen SH, O'Neill AG, Eneman G, Verheyen P, Loo R, Claeys C. . Solid-State Electronics 2007, 51(11-12), 1473-1478.
    • Agaiby R, Yang Y, Olsen SH, O'Neill AG, Eneman G, Verheyen P, Loo R, Claeys C. . Solid-State Electronics 2007, 51(11-12), 1473-1478.
    • Tsang YL, Chattopadhyay S, Uppal S, Escobedo-Cousin E, Ramakrishnan HK, Olsen SH, O'Neill AG. . IEEE Transactions on Electron Devices 2007, 54(11), 3040-3048.
    • Wilson CJ, Horsfall AB, O'Neill AG, Wright NG, Bull SJ, Terry JG, Stevenson JTM, Walton AJ. . IEEE Transactions on Device and Materials Reliability 2007, 7(2), 356-362.
    • Wang K, Horsfall A, Cuthbertson A, Bull S, O'Neill A. . Microelectronic Engineering 2007, 84(11), 2486-2490.
    • De Michielis M, Esseni D, Tsang YL, Palestri P, Selmi L, O'Neill AG, Chattopadhyay S. . IEEE Transactions on Electron Devices 2007, 54(9), 2164-2173.
    • Nikitina IP, Vassilevski KV, Horsfall AB, Wright NG, O'Neill AG, Johnson CM, Yamamoto T, Malhan RK. . Semiconductor Science and Technology 2006, 21(7), 898-905.
    • Varzgar JB, Kanoun M, Uppal S, Chattopadhyay S, Tsang YL, Escobedo-Cousin E, Olsen SH, O'Neill AG, Hellstrom PE, Edholm J, Ostling M, Lyutovich K, Oehme M, Kasper E. . Material Science and Engineering B 2006, 135(3), 203-206.
    • Varzgar JB, Kanoun M, Uppal S, Chattopadhyay S, Tsang YL, Escobedo-Cousins E, Olsen SH, O'Neill A, Hellstrom P-E, Edholm J, Ostling M, Lyutovich K, Oehme M, Kasper E. . Materials Science and Engineering B: Solid-State Materials for Advanced Technology 2006, 135(3), 203-206.
    • Saha AR, Dimitriu CB, Horsfall AB, Chattopadhyay S, Wright NG, O'Neill AG, Bose C, Maiti CK. . Journal of Applied Physics 2006, 99(11), 113707.
    • Jankovic ND, Pesic TV, O'Neill A. . Solid-State Electronics 2006, 50(3), 496-499.
    • Dalapati GK, Chattopadhyay S, Kwa KSK, Olsen SH, Tsang YL, Agaiby R, O'Neill AG, Dobrosz P, Bull SJ. . IEEE Transactions on Electron Devices 2006, 53(5), 1142-1152.
    • Uppal S, Kanoun M, Varzgar JB, Chattopadhyay S, Olsen SH, O'Neill AG. . Material Science and Engineering B 2006, 135(3), 207-209.
    • Uppal S, Kanoun M, Varzgar JB, Chattopadhyay S, Olsen S, O'Neill A. . Materials Science and Engineering B: Solid-State Materials for Advanced Technology 2006, 135(3), 207-209.
    • Yan L, Olsen SH, Kanoun M, Agaiby R, O'Neill AG. . Journal of Applied Physics 2006, 100(10), 104507.
    • Dalapati GK, Chattopadhyay S, Driscoll LS, O'Neill AG, Kwa KSK, Olsen SH. . Journal of Applied Physics 2006, 99(3), 034501.
    • Dalapati GK, Chattopadhyay S, Driscoll LS, O'Neill AG, Kwa KSK, Olsen SH. . Journal of Applied Physics 2006, 99(3), 024501.
    • Olsen SH, Escobedo-Cousin E, Varzgar JB, Agaiby R, Seger J, Dobrosz P, Chattopadhyay S, Bull SJ, O'Neill AG, Hellstrom P-E, Edholm J, Ostling M, Lyutovich KL, Oehme M, Kasper E. . IEEE Transactions on Electron Devices 2006, 53(9), 2296-2305.
    • Dobrosz P, Bull SJ, Olsen SH, O'Neill AG. . Surface and Coatings Technology 2005, 200(5-6), 1755-1760.
    • Terry JG, Smith S, Walton AJ, Gundlach AM, Stevenson JTM, Horsfall AB, Wang K, Dos Santos JMM, Soare SM, Wright NG, O'Neill AG, Bull SJ. . IEEE Transactions on Semiconductor Manufacturing 2005, 18(2), 255-260.
    • Olsen SH, O'Neill AG, Dobrosz P, Bull SJ, Driscoll LS, Chattopadhyay S, Kwa KSK. . Journal of Applied Physics 2005, 97(11), 1-9.
    • Blasciuc-Dimitriu C, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG. . Semiconductor Science and Technology 2005, 20(1), 10-15.
    • Norris DJ, Cullis AG, Olsen SH, O'Neill AG. . Thin Solid Films 2005, 474(1-2), 154-158.
    • Vassilevski KV, Wright NG, Nikitina IP, Horsfall AB, O'Neill AG, Uren MJ, Hilton KP, Masterton AG, Hydes AJ, Johnson CM. . Semiconductor Science and Technology 2005, 20(3), 271-278.
    • Chen CC, Horsfall AB, Wright NG, O'Neill AG. . Materials Science Forum 2005, 483-485, 913-916.
    • Bhatnagar P, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG. . Solid-State Electronics 2005, 49(3), 453-458.
    • Soare S, Bull SJ, Oila A, O'Neill AG, Wright NG, Horsfall A, Dos Santos JMM. . Zeitschrift für Metallkunde 2005, 96(11), 1262-1266.
    • Soare S, Bull SJ, Oila A, O'Neill AG, Wright NG, Horsfall A, Dos Santos JMM. . International Journal of Materials Research 2005, 96(11), 1262-1266.
    • Nikitina IP, Vassilevski KV, Wright NG, Horsfall AB, O'Neill AG, Johnson CM. . Journal of Applied Physics 2005, 97(8), 1-7.
    • dos Santos JMM, Wang K, Horsfall AB, Pina JCP, Wright NG, O'Neill AG, Soare SM, Bull SJ, Terry JG, Walton AJ, Gundlach AM, Stevenson JTM. . IEEE Transactions on Device and Materials Reliability 2005, 5(4), 713-719.
    • Olsen SH, O'Neill AG, Norris DJ, Cullis AG, Bull SJ, Chattopadhyay S, Kwa KSK, Driscoll LS, Waite AM, Tang YT, Evans AGR. . Materials Science and Engineering B 2004, 109(1-3), 78-84.
    • Dobrosz P, Bull SJ, Olsen SH, O'Neill AG. . International Journal of Materials Research 2004, 95(5), 340-344.
    • Olsen SH, O'Neill AG, Chattopadhyay S, Driscoll LS, Kwa KSK, Norris DJ, Cullis AG, Paul DJ. . IEEE Transactions on Electron Devices 2004, 51(8), 1245-1253.
    • Olsen SH, Kwa KSK, Chattopadhyay S, Driscoll LS, O'Neill AG. . IEE Proceedings: Circuits, Devices and Systems 2004, 151(5), 431-437.
    • Jankovic ND, O'Neill A. . Solid-State Electronics 2004, 48(2), 277-284.
    • Olsen SH, O'Neill AG, Driscoll LS, Chattopadhyay S, Kwa KSK, Waite AM, Tang YT, Evans AGR, Zhang J. . IEEE Transactions on Electron Devices 2004, 51(7), 1156-1163.
    • Soare S, Bull SJ, O'Neill AG, Wright N, Horsfall AB, dos Santos JMM. . Surface and Coatings Technology 2004, 177-178, 497-503.
    • Dobrosz P, Bull SJ, Olsen SH, O'Neill AG. . Zeitschrift fuer Metallkunde 2004, 95(5), 340-344.
    • Dobrosz P, Bull SJ, Olsen SH, O'Neill AG. . Materials Research Society Symposium Proceedings: High-Mobility Group-IV Materials and Devices 2004, 809, 340-344.
    • Dobrosz P, Bull SJ, Olsen SH, O'Neill AG. . Materials Research Society Symposium Proceedings: High-Mobility Group-IV Materials and Devices 2004, 809, 109-114.
    • Driscoll L, Olsen S, Chattopadhyay S, O'Neill A, Kwa K, Dobrosz P, Bull S. . Materials Research Society Symposium Proceedings: High-Mobility Group-IV Materials and Devices 2004, 809, 225-230.
    • Olsen SH, O'Neill AG, Chattopadhyay S, Kwa KSK, Driscoll LS, Norris DJ, Cullis AG, Robbins DJ, Zhang J. . Journal of Applied Physics 2004, 95(10), 5931-5933.
    • Olsen SH, O'Neill AG, Chattopadhyay S, Kwa KSK, Driscoll LS, Norris DJ, Cullis AG, Robbins DJ, Zhang J. . Semiconductor Science and Technology 2004, 19(6), 707-714.
    • Olsen SH, Kwa KSK, Driscoll LS, Chattopadhyay S, O'Neill AG. . IEE Proceedings: Circuits, Devices and Systems 2004, 151(5), 431-437.
    • Horsfall AB, Wang K, Dos-Santos JMM, Soare SM, Bull SJ, Wright NG, O'Neill AG, Terry JG, Walton AJ, Gundlach AM, Stevenson JTM. . IEEE Transactions on Device and Materials Reliability 2004, 4(3), 482-486.
    • Jankovic ND, O'Neill A. . Solid-State Electronics 2004, 48(2), 225-230.
    • Childs PA, O'Neill A. . Physica E 2003, 19(1-2), 153-156.
    • Olsen SH, O'Neill AG, Norris DJ, Cullis AG, Fobelets K, Kemhadjian HA. . Solid State Electronics 2003, 47(8), 1289-1295.
    • Olsen SH, O'Neill AG, Norris DJ, Cullis AG, Fobelets K, Kemhadjian HA. . Solid-State Electronics 2003, 47(8), 1289-1295.
    • Olsen SH, O'Neill AG, Chattopadhyay S, Kwa KSK, Driscoll LS, Zhang J, Robbins DJ, Higgs V. . Journal of Applied Physics 2003, 94(10), 6855-6863.
    • Olsen SH, O'Neill AG, Driscoll LS, Kwa KSK, Chattopadhyay S, Waite AM, Tang YT, Evans AGR, Norris DJ, Cullis AG, Paul DJ, Robbins DJ. . IEEE Transactions on Electron Devices 2003, 50(9), 1961-1969.
    • Jankovic ND, O'Neill A. . Semiconductor Science and Technology 2003, 18(9), 901-906.
    • Horsfall AB, Dos Santos JMM, Soare SM, Wright NG, O'Neill AG, Bull SJ, Walton AJ, Gundlach AM, Stevenson JTM. . Semiconductor Science and Technology 2003, 18(11), 992-996.
    • Chattopadhyay S, Kwa KSK, Olsen SH, Driscoll LS, O'Neill AG. . Semiconductor Science and Technology 2003, 18(8), 738-744.
    • Blasciuc-Dimitriu C, Horsfall AB, Vasilevskiy KV, Johnson CM, Wright NG, O'Neill AG. . Materials Science Forum 2003, 433-436, 823-826.
    • Chattopadhyay S, Kwa KSK, Olsen SH, Driscoll LS, ONeill AG. . Semiconductor Science and Technology 2003, 18(8), 738-744.
    • Kwa KSK, Chattopadhyay S, Jankovic ND, Olsen SH, Driscoll LS, O'Neill AG. . Semiconductor Science and Technology 2003, 18(2), 82-87.
    • Olsen SH, O'Neill AG, Norris DJ, Cullis AG, Woods NJ, Zhang J, Fobelets K, Kemhadjian HA. . Semiconductor Science and Technology 2002, 17(7), 655-661.
    • Phelps GJ, Wright NG, Chester EG, Johnson CM, O'Neill AG. . Semiconductor Science and Technology 2002, 17(5), L17-L21.
    • Phelps GJ, Wright NG, Johnson CM, O'Neill AG, Ortolland SA. . Applied Physics Letters 2002, 80(2), 228-230.
    • Phelps GJ, Wright NG, Chester EG, Johnson CM, O'Neill AG, Ortolland S, Horsfall A, Vassilevski K, Gwilliam RM, Coleman PG, Burrows CP. . Applied Physics Letters 2002, 80(2), 228-230.
    • Olsen SH, O'Neill AG, Bull SJ, Woods NJ, Zhang J. . Journal of Applied Physics 2002, 92(3), 1298-.
    • Badcock SG, O'Neill AG, Chester EG. . Solid-State Electronics 2002, 46(11), 1925-1932.
    • Badcock SG, O'Neill AG, Chester EG. . Solid-State Electronics 2002, 46(11), 1925-1932.
    • Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG. . Materials Science Forum 2002, 389-393(2), 1145-1148.
    • Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG. . IEEE Transactions on Electron Devices 2002, 49(5), 947-949.
    • Johnson CM, Wright NG, Uren MJ, Hilton KP, Rahimo M, Hinchley DA, Knights AP, Morrison DJ, Horsfall AB, Ortolland S, O'Neill AG. . IEE Proceedings: Circuits, Devices and Systems 2001, 148(2), 101-108.
    • Adachi K, Johnson CM, Ortolland S, Wright NG, O'Neill AG. . Materials Science Forum 2000, 338-342, 1419-1422.
    • Morrison DJ, Pidduck AJ, Moore V, Wilding PJ, Hilton KP, Uren MJ, Johnson CM, Wright NG, O'Neill AG. . Semiconductor Science and Technology 2000, 15(12), 1107-1114.
    • Badcock S, O'Neill A. . Superlattices and Microstructures 2000, 28(5-6), 363-368.
    • Knights AP, Lourenco MA, Homewood KP, Morrison DJ, Wright NG, Ortolland S, Johnson CM, O'Neill AG, Coleman PG, Hilton KP, Uren MJ. . Journal of Applied Physics 2000, 87(8), 3973-3977.
    • Wright NG, Johnson CM, ONeill AG, Horsfall AB, Ortoll S, Adachi K, Knights AP, Coleman PG. . Materials Research Society Symposium Proceedings 2000, 622, T1.7.1-T1.7.6.
    • Hossin M, Johnson CM, Wright NG, O'Neill AG. . Solid-State Electronics 2000, 44(1), 85-94.
    • Morrison DJ, Wright NG, Horsfall AB, Johnson CM, O'Neill AG, Knights AP, Hilton KP, Uren MJ. . Solid-State Electronics 2000, 44(11), 1879-1885.
    • Knights AP, Morrison DJ, Wright NG, Johnson CM, O'Neill AG, Ortolland S, Homewood KP, Lourenco MA, Gwilliam RM, Coleman PG. . Materials Research Society Symposium - Proceedings 1999, 572, 129-134.
    • Adachi K, Johnson CM, Ortolland S, Wright NG, O'Neill AG. . Materials Science Forum: Silicon Carbide and Related Materials 1999 1999, 338-342, 1419-1422.
    • O'Neill AG, Routley P, Gurry PK, Clifton PA, Kemhadjian H, Fernandez J, Cullis AG, Benedetti A. . Semiconductor Science and Technology 1999, 14(9), 784-789.
    • Low KS, O'Neill A. . Materials Research Society Symposium - Proceedings 1999, 564, 365-370.
    • Ortolland S, Johnson CM, Wright NG, Morrison DJ, O'Neill AG. . Materials Science and Engineering B 1999, 61-62, 411-414.
    • Low KS, Poetzlberger H, O'Neill A. . Materials Research Society Symposium - Proceedings 1999, 563, 133-138.
    • Wright NG, Johnson CM, O'Neill AG. . Solid-State Electronics 1999, 43(3), 515-520.
    • Wright NG, Johnson CM, O'Neill AG. . Solid-State Electronics 1999, 43(3), 515-520.
    • Morrison DJ, Hilton KP, Uren MJ, Wright NG, Johnson CM, O'Neill AG. . Materials Science and Engineering B: Solid-State Materials for Advanced Technology 1999, 61-62(0), 345-348.
    • Wright NG, Johnson CM, O'Neill AG. . Solid-State Electronics 1998, 42(3), 437-440.
    • O'Neill AG, Ghiti A. The effects of grain boundary diffusion anisotropy on via electromigration failure. Journal of Applied Physics, 81, No 7, 3064-3068 1997.
    • O'Neill AG, Antoniadis DA. Investigation of Si/SiGe-based FET geometries for high frequency performance by computer simulation. IEEE Transactions on Electron Devices, 44, No 1, 80-88 1997.
    • O'Neill AG, Antoniadis DA. Deep submicron CMOS based on silicon germanium technology. IEEE Transactions on Electron Devices, 43, No 6, 911-918 1996.

  • Book Chapter

    • Norris DJ, Cullis AG, Olsen SH, O'Neill AG, Zhang J. . In: Microscopy of Semiconducting Materials 2003. Boca Raton, FL, USA: CRC Press, 2018, pp.389-392.

  • Conference Proceedings (inc. Abstracts)

    • Idil AS, Bailey R, Escobedo-Cousin E, Gausden J, O'Neill A, Donaldson N. . In: 24th European Microelectronics & Packaging Conference (EMPC23). 2023, Hinxton (near Cambridge), UK: International Microelectronics and Packaging Society (IMAPS).
    • Arith F, Urresti J, Vasilevskiy K, Olsen S, Wright N, O'Neill A. . In: 48th European Solid-State Device Research Conference (ESSDERC). 2018, Dresden, Germany: IEEE.
    • Orneill A, Arith F, Urresti J, Vasilevskiy K, Wright N, Olsen S. . In: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). 2018, Qingdao, China: IEEE.
    • Choong ZJ, Huo D, Degenaar P, O'Neill A. . In: 17th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2017. 2017, Hannover, Germany: euspen.
    • Dehkhoda F, Soltan A, Ponon N, O'Neill A, Degenaar P. . In: 13th IEEE Biomedical Circuits and Systems Conference (BioCAS 2017). 2017, Torino, Italy: IEEE.
    • Roy SK, Ibanez JU, O'Neill AG, Wright NG, Horsfall AB. . In: 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM). 2017, Halkidiki, Greece: Trans Tech Publications Ltd.
    • Choong ZJ, Huo D, Degenaar P, O'Neill A. . In: ASME 2016 11th International Manufacturing Science and Engineering Conference. 2016, Blacksburg, Virginia, USA: American Society of Mechanical Engineers.
    • Choong ZJ, Huo D, Degenaar P, O'neill A. . In: 16th International Conference of the European Society for Precision Engineering and Nanotechnology (EUSPEN 2016). 2016, Nottingham, UK: EUSPEN.
    • Shi Y, Huo D, Zhao Y, Al-Shibaany ZYA, Hedley J. . In: 15th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2015. 2015, Leuven, Belgium: euspen.
    • O'Neill A, Appleby D, Ponon N, Kwa K. . In: 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). 2014, Guilin, China: IEEE.
    • Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill A, Horsfall A, Goss J. . In: International Conference on Silicon Carbide and Related Materials 2013. 2014, Miyazaki, Japan: Scientific.Net.
    • Hopf T, Vassilevski K, Escobedo-Cousin E, Wright N, O'Neill A, Horsfall A, Goss J, Barlow A, Wells G, Hunt M. . In: 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013). 2014, Miyazaki, Japan: Scientific.Net / Trans Tech Publications Inc.
    • Ponon NK, Appleby DJR, Arac E, Kwa KSK, Goss JP, Hannemann U, Petrov PK, Alford NM, O'Neill A. . In: MRS Fall Meeting and Exhibit. 2014, Boston, MA, USA: Cambridge University Press.
    • King PJ, Arac E, Ganti S, Ramadan S, Kwa KSK, Barlow AJ, Cumpson PJ, Robertson J, O'Neill AG. . In: 12th International Baltic ALD 2014. 2014, Helsinki, Finland.
    • Za'bah NF, Kwa KSK, O'Neill A. . In: 5th International Conference on Mechanical and Manufacturing Engineering (ICME 2014). 2014, Bandung, Indonesia: Trans Tech Publications Ltd.
    • Za'Bah NF, Kwa KSK, O'Neill A. . In: RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics. 2013, Langkawi, Malaysia: IEEE.
    • O'Neill A. Strained Silicon Heterojunction Bipolar Transistors. In: SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES. 2012, 65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA: ELECTROCHEMICAL SOC INC.
    • Escobedo-Cousin E, Vassilevski K, Nikitina I, Wright N, O'Neill A, Horsfall A, Goss J. . In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
    • Ponon N, Appleby D, Mojarad SA, Kwa K, O'Neill A. . In: Intel ERIC. 2012, Dublin, Ireland.
    • Halak B, Yakovlev A, O'Niell A. . In: Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC). 2010, Buenos Aires, Argentina: IEEE.
    • Wilson CJ, Volders H, Croes K, Pantouvaki M, Beyer GP, Horsfall AB, O'Neill AG, Tokei Z. . In: Microelectronic Engineering: 18th European Workshop on Materials for Advanced Metallization. 2010, Grenoble, France: Elsevier BV.
    • Sohal H, Jackson A, Jackson R, Vasilevskiy K, Clowry GJ, O'Neill A, Baker SN. . In: 40th Annual Meeting of the Society for Neuroscience. 2010, San Diego, California, USA: Society for Neuroscience.
    • Wilson C, Zhaoa C, Zhaoc L, Tökei Z, Croesa K, Pantouvakia M, Beyera G, Horsfall AB, O'Neill A. . In: Proceedings of the IEEE International Interconnect Technology Conference (IITC). 2009, Sapporo, Hokkaido, Japan: IEEE.
    • Vassilevski K, Nikitina I, Horsfall A, Wright N, O'Neill AG, Gwilliam R, Johnson CM. . In: 7th European Conference on Silicon Carbide and Related Materials (ECSCRM 2008). 2009, Barcelona, Spain: Materials Science Forum: Trans Tech Publications Ltd.
    • De Michielis L, Moselund K, Bouvet D, Dobrosz P, Olsen S, O'Neill A, Lattanzio L, Najmzadeh M, Selmi L, Ionescu A. . In: International Symposium on VLSI Technology, Systems, and Applications, Proceedings. 2009, Hsinchu, Taiwan: IEEE.
    • Wilson CJ, Croes K, Tokei Z, Beyer GP, Horsfall AB, O'Neill AG. . In: IEEE International Conference on Microelectronic Test Structures (ICMTS 2009). 2009, Oxnard, CA, USA: IEEE.
    • Alatise O, Kwa K, Olsen S, O'Neill A. . In: International Semiconductor Device Research Symposium (ISDRS). 2009, College Park, Maryland, USA.
    • Houlton A, Horrocks BR, Wright NG, Olsen S, O'Neill A. . In: Intel European Research and Innovation Conference. 2008, Leixlip, Ireland: Intel Europe.
    • Olsen SH, Tarawneh ZAl, Varzgar J, Escobedo-Cousin E, Agaiby RMB, Dobrosz P, O'Neill AG, Hellström P-E, Östling M, Parker E, Loo R, Claeys C. . In: 7th International Semiconductor Technology Conference. 2008, Shanghai, China: The Electrochemical Society.
    • O'Neill AG, Tsang YL, Gallacher BJ, Olsen SH. . In: 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). 2008, Beijing, China: IEEE.
    • Nikitina I, Vassilevski K, Horsfall A, Wright N, O'Neill AG, Ray SK, Johnson CM. . In: 7th European Conference on Silicon Carbide and Related Materials (ECSCRM 2008). 2008, Barcelona, Spain: Materials Science Forum: Trans Tech Publications Ltd.
    • Dobrosz P, Olsen SH, Bull SJ, Tsang YL, Agaiby RMB, O'Neill AG, Buca D, Mantl S, Ghyselen B. . In: E-MRS 2008 Spring Conference. 2008, Strasbourg, France.
    • Olsen SH, Dobrosz P, Agaiby RMB, Tsang YL, Alatise O, Bull SJ, O'Neill AG, Moselund KE, Ionescu AM, Majhi P, Buca D, Mantl S, Coulson H. . In: E-MRS 2008 Spring Meeting. 2008, Strasbourg: Materials Science in Semiconductor Processing: Pergamon.
    • Agaiby RMB, Olsen SH, Dobrosz P, Coulson H, Bull SJ, O'Neill AG. . In: 50th Electronic Materials Conference (EMC 2008). 2008, Santa Barbara, USA: The Minerals, Metals & Materials Society (TMS).
    • Najmzadeh M, Moselund K, Ionescu A, Dobrosz P, Olsen S, O'Neill AG. . In: 38th European Solid State Device Research Conference (ESSDERC 2008). 2008, Edinburgh, UK.
    • Wang K, Wilson CJ, Cuthbertson A, Herberholz R, Coulson HP, O'Neill AG, Horsfall AB. . In: IEEE International Reliability Physics Symposium Proceedings. 2008, Phoenix, AZ: IEEE.
    • Alatise OM, Kwa KSK, Olsen SH, O'Neill AG. . In: ESSDERC 2008: Proceedings of the 38th European Solid State Device Research Conference. 2008, Edinburgh, UK: IEEE.
    • Persson S, Fjer M, Escobedo-Cousin E, Malm G, Wang YB, Hellstrom PE, Ostling M, Parker EHC, Nash LJ, Majhi P, Olsen SH, O'Neill AG. . In: IEEE International Electron Devices Meeting (IEDM). 2008, San Francisco, CA: IEEE.
    • Childs PA, Ong SY, Herbert DC, Milne WI, Teo KBK, Shang NG, Gangloff A L, Smith D, O'Neill AG. . In: International conference on charged and neutral particles channeling phenomena II : "Channeling 2006". 2007, Rome, Italy: SPIE.
    • Escobedo-Cousin E, Olsen SH, O'Neill AG, Alatise OM, Agaiby RMB, Dobrosz P, Braithwaite G, Cuthbertson A, Grasby T, Parker EHC. . In: Materials REsearch Society Conference (MRS). 2007, San Francisco, USA.
    • Olsen SH, Yana L, Agaiby R, Escobedo-Cousin E, O'Neill AG, Hellstrom PE, Ostling M, Lyutovich K, Kasper E, Claeys C, Parker EHC. . In: 4th IEEE International Symposium on Advanced Gate Stack Technology (ISAGST 2007). 2007, Dallas, Texas: Microelectronic Engineering: Elsevier.
    • Olsen SH, Yan L, Agaiby R, Escobedo-Cousin E, O'Neill AG. . In: International Symposium on Advanced Gate Stack Technology (ISAGST). 2007, Dallas, USA.
    • Olsen SH, et al. . In: International Symposium on Advanced Gate Stack Technology (ISAGST). 2007, Dallas, USA (invited).
    • O'Neill A, Olsen S, Yang Y, Agaiby R, Hellstrom PE, Ostling M, Oehme M, Lyutovich K, Kasper E, Eneman G, Verheyen P, Loo R, Claeys C, Fiegna C, Sangiorgi E. . In: Proceedings ISCSI-V. 2007, Tokyo, Japan.
    • O'Neill AG, Olsen SH, Yang Y, Agaiby R, Hellstrom P-E, Ostling M, Lyutovich K, Kasper E, Eneman G, Verheyen P, Loo R, Claeys C, Fiegna C, Sangiorgi E. . In: International Symposium on Control of Semiconductor Interfaces (ISCSI-V). 2007, Tokyo, Japan.
    • O'Neill AG, Olsen SH, Yang Y, Agaiby R, Hellstrom P-E, Ostling M, Lyutovich K, Kasper E, Eneman G, Verheyen P, Loo R, Claeys C, Fiegna C, Sangiorgi E. . In: 3rd International Workshop on New Group IV Semiconductor Nanoelectronics. 2007, Sendai, Japan.
    • Olsen SH. . In: International Nanotechnology Conference (INC3). 2007, Brussels, Belgium.
    • Vassilevski K, Nikitina I, Horsfall A, Wright NG, O'Neill AG, Hilton KP, Munday AG, Hydes AJ, Uren MJ, Johnson CM. . In: 6th European Conference on Silicon Carbide and Related Materials (ECSCRM 2006). 2007, 缅北禁地 upon Tyne, UK: Materials Science Forum: Trans Tech Publications Ltd.
    • O'Neill AG, Olsen SH, Tsang YL, Dobrosz P. . In: INFOS. 2007, Athens, Greece.
    • Moselund KE, Dobrosz P, Olsen S, Pott V, De Michielis L, Tsamados D, Bouvet D, O'Neill A, Ionescu AM. . In: International Electron Devices Meeting (IEDM). 2007, Washington, DC: IEEE.
    • Wang K, Cuthbertson A, Horsfall AB, Yeoh JC, Herberholz R, O'Neill AG, Colledge S, Coulson HP, Watson D, Braithwaite G. . In: VLSI Multilevel Interconnection Conference. 2007, Fremont, California.
    • O'Neill AG, Olsen SH, Yang Y, Agaiby R, Hellstron PE, Ostling M, Oehme M, Lyutovich K, Kasper E, Eneman G, Verheyen P, Loo R, Claeys C, Fiegna C, Sangiorgi E. . In: Sendai Workshop. 2007, Japan.
    • Olsen SH, Bull SJ, Dobrosz P, Escobedo-Cousin E, Agaiby R, O'Neill AG, Coulson H, Claeys C, Loo R, Delhougne R, Caymax M. . In: Transistor Scaling- Methods, Materials and Modeling. 2006, San Francisco, USA: Materials Research Society.
    • Dalapati GK, Kwa KSK, Olsen SH, Chattopadhyay S, O'Neill AG, Driscoll LS, Tsang YL, Agaiby R, Escobedo-Cousin E. . In: International Conference on Electronic and Photonic Material, Devices and Systems (EPMDS). 2006, Calcutta, India.
    • Olsen SH, Dobrosz P, Bull S, O'Neill A. . In: 33rd International Conference on Metallurgical Coatings and Thin Films (ICMCTF 2006). 2006, San Diego, USA.
    • Escobedo-Cousin E, Olsen SH, Bull SJ, O'Neill AG, Coulson H, Claeys C, Loo R, Delhougne R, Caymax M. . In: Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 2006, Princeton, USA: IEEE Press.
    • Escobedo-Cousin E, Olsen SH, Bull SJ, O'Neill AG, Coulson H, Claeys C, Loo R, Delhougne R, Caymax M. . In: 3rd International Silicon-Germanium Device and Technology Meeting (ISTDM 2006). 2006, Princeton, New Jersey, USA.
    • O'Neill AG, Olsen SH, Escobedo-Cousin E, Varzgar JB, Agaiby R, Chattopadhyay S, Dobrosz P, Bull S, Hellstrom P-E, Ostling M, Lyutovich K, Kasper E. . In: ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2006, Shanghai, China: IEEE Press.
    • O'Neill AG. . In: IEEE Lecture. 2006, Indian Institute of Technology, Kharagpur, India: IEEE.
    • O'Neill AG, Olsen SH, Chattopadhyay S. . In: Proceedings of the International Conference on Electronic and Photonic Material, Devices and Systems (EPMDS). 2006, Calcutta, India.
    • O'Neill AG, Olsen SH, Escobedo-Cousin E, Varzgar JB, Agaiby R, Chattopadhyay S, Dobrosz P, Bull SJ, Hellstrom P-E, Ostling M, Lyutovich K, Kasper E. . In: Solid-State and Integrated Circuit Technology Conference (ICSICT). 2006, Shanghai, China.
    • O'Neill AG, Olsen SH, Escobedo-Cousin E, Varzgar JB, Agaiby R, Seger J, Dobrosz P, Chattopadhyay S, Bull SJ, Hellstrom P-E, Edholm J, Ostling M, Lyutovich K, Oehme M, Kasper E. . In: Symposium on Diagnostics & Yield: Advanced Silicon Devices and Technologies for the ULSI Era. 2006, Warsaw, Poland.
    • Olsen SH, Dobrosz P, Escobedo-Cousin E, Agaiby RMB, Agaiby R, Bull SJ, O'Neill AG. . In: European Solid State Device Research Conference (ESSDERC) Workshop. 2006, Montreux, Switzerland.
    • Agaiby R, O'Neill AG, Olsen SH, Eneman G, Verheyen P, Loo R, Claeys C. . In: Proceeding of the 36th European Solid-State Device Research Conference (ESSDERC). 2006, Montreux, France: IEEE.
    • Agaiby R, O'Neill AG, Olsen SH, Eneman G, Verheyen P, Loo R, Claeys C. . In: European Solid State Device Research Conference (ESSDERC). 2006, Montreux, Switzerland.
    • Agaiby R, O'Neill A, Olsen S, Eneman G, Verheyen P, Loo R, Claeys C. Quantifying self-heating effects in strained Si MOSFETs with scaling. In: ESSDERC 2006: Proceedings of the 36th European Solid-State Device Research Conference. 2006, 345 E 47TH ST, NEW YORK, NY 10017 USA: IEEE.
    • Dalapati GK, Kwa KSK, Olsen SH, Chattopadhyay S, O'Neill AG, Tsang YL, Agaiby R. . In: International Conference on Electronic and Photonic Materials, Devices and Systems (EPMDS). 2006, India.
    • Vassilevski K, Nikitina I, Bhatnagar P, Horsfall A, Wright N, O'Neill AG, Uren M, Hilton K, Munday A, Hydes A, Johnson CM. . In: Materials Science Forum. 2006, Pittsburgh, Pennsylvania, USA: Trans Tech Publications Ltd.
    • Uppal S, Kanoun M, Chattopadhyay S, Agaiby R, Olsen SH, Bull SJ, O'Neill A. . In: Materials Research Society Symposium Proceedings: MRS Spring Meeting. 2006, San Francisco, California, USA: Materials Research Society.
    • Uppal S, Kanoun M, Chattopadhyay S, Agaiby R, Olsen SH, Bull SJ, O'Neill AG. . In: Doping Engineering for Device Fabrication. 2006, San Francisco, USA: Materials Research Society.
    • Uppal S, Varzgar JB, Kanoun M, Chattopadhyay S, Olsen SH, O'Neill AG. . In: Materials Science and Engineering B: Advanced Functional Solid-state Materials. E-MRS Conference. 2006, Nice, France: Elsevier SA.
    • Uppal S, Varzgar J, Chattopadhyay S, Olsen SH, O'Neill AG. . In: Proceedings of the European Materials Research Society Conference (E-MRS). 2006, Nice, France.
    • Varzgar JB, Chattopadhyay S, Uppal S, Chandra P, Olsen SH, O'Neill AG. . In: European Materials Research Society Conference (E-MRS). 2006, Nice, France.
    • Varzgar JB, Kanoun M, Uppal S, Chattopadhyay S, Chandra P, Olsen SH, O'Neill AG, Hellstron P-E, Edholm J, Ostling M, Lyutovich K, Oehme M, Kasper E. . In: Materials Science and Engineering B: Advanced Functional Solid-state Materials. E-MRS Conference. 2006, Nice, France: Elsevier SA.
    • O'Neill AG, Olsen SH, Tsang YL, Dobrosz P. . In: Insulating Films on Semiconductors (INFOS). 2006, Athens, Greece.
    • Wilson CJ, Horsfall AB, O'Neill AG, Wright NG, Wang K, Bull SJ, Terry JG, Stevenson JTM, Walton AJ. . In: IEEE International Reliability Physics Symposium Proceedings. 2006, San Jose, CA: IEEE.
    • O'Neill AG. . In: NanoSea: International Conference on Nanostructures SElf-Assembly. 2006, Aix-en-Provence, France.
    • O'Neill AG, Olsen SH, Escobedo-Cousin E, Agaiby R, Bull SJ, Coulson H, Claeys C, Loo R, Delougne R, Caymax M, Verheyen P, Eneman G. . In: International Conference on NANO-Structures Self-Assembling (NANOSea). 2006, Aix-en-Provence, France.
    • Vassilevski KV, Nikitina IP, Wright NG, Horsfall AB, O'Neill AG, Johnson CM. . In: 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials. 2006, Singapore: Microelectronic Engineering, Elsevier BV.
    • Chattopadhyay S, Varzgar JB, Seger J, Tsang YL, Kwa KSK, Olsen SH, O'Neill AG. . In: International Conference on Electronic and Photonic Material, Devices and Systems (EPMDS 2006). 2006, Calcutta, India.
    • Chattopadhyay S, Varzgar JB, Seger J, Tsang YL, Kwa KSK, Olsen SH, O'Neill AG. . In: EMPDS (Electronic and Photonic Materials, Devices and Systems). 2006, India.
    • Philip M, O'Neill A. . In: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. 2006, Perth, Western Australia: IEEE.
    • Bhatnagar P, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG. . In: International Conference on Silicon Carbide and Related Materials (ICSCRM 2005). 2006, Pittsburgh, PA: Materials Science Forum: Trans Tech Publications Ltd.
    • Tsang YL, Chattopadhyay S, Kwa KSK, Dalapati GK, Agaiby R, O'Neill AG, Olsen SH. . In: International Conference on Electronic and Photonic Materials, Devices and Systems (EPMDS-2006). 2006, Calcutta, India.
    • Yan L, Olsen SH, Kanoun M, AlAraimi M, Agaiby R, Dalapati GK, ONeill AG. . In: SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting. 2006, Cancun, Mexico: The Electrochemical Society.
    • Yan L, Olsen SH, Kanoun M, Al-Araimi M, Agaiby R, Dalapati GK, O'Neill AG. . In: 210th Electrochemical Society Meeting. 2006, Cancun, Mexico: ECS Transactions, Electrochemical Society, Inc.
    • Yan L, Olsen S, Kanoun M, Al-Araimi M, Agaiby R, Dalapati G, O'Neill A. . In: 210th ECS Meeting. 2006, Cancun, Mexico: The Electrochemical Society.
    • Hellstrom P-E, Edholm J, Ostling M, Olsen S, O'Neill A, Lyutovich K, Oehme M, Kasper E. . In: International Semiconductor Device Research Symposium. 2005, Washinton DC, USA: IEEE.
    • Olsen S, Temple M, Chattopadhyay S, O'Neill A, Paul DJ, Kwa K, Drsicoll AWL, Tang AEY, Zhang J. . In: Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSi4). 2005, Awaji Island, Japan.
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  • Letter

    • Gaspari V, Fobelets K, Ding PW, Velazquez-Perez JW, Olsen SH, O'Neill AG, Zhang J. . IEEE Electron Device Letters 2004, 25(5), 334-336.

  • Review

    • Chattopadhyay S, Driscoll LD, Kwa KSK, Olsen SH, O'Neill AG. . Solid-State Electronics 2004, 48(8), 1407-1416.