缅北禁地

Introduction

Dr Konstantin Vasilevskiy (Vassilevski) joined 缅北禁地 in February 2001. He is a member of the 

Background

Dr Vasilevskiy has a strong background in experimental and theoretical physics. He has in-depth understanding of physics and operation of semiconductor devices proven by numerous publications. His work included numerical simulation of device operation, epi-structure and device layout design, development of device process flow, definition of process control test structures, fabrication and characterisation of various semiconductor devices.

Dr Vasilevskiy displays a rigorous device fabrication technique backed up by many years of hands-on experience in all basic wafer processing procedures including atomic layer deposition of high-k dielectrics; oxidation; diffusion; wet and dry etching; contact lithography; thin film deposition by magnetron sputtering, e-beam and thermal evaporation; rapid thermal processing. Dr Vasilevskiy gained deep understanding of specific device processing flow design defined by unique properties of WBG materials.

Dr Vasilevskiy has extensive experience in use and data analysis of material characterisation methods including XRD, XPS, AES, SIMS, Raman spectroscopy, AFM, SEM and Hall measurements. He has strong background and experience in electrical characterisation of semiconductor devices.

Dr Vasilevskiy has an extensive track record of concept development and realization of innovative device designs and process solutions which includes   

- design and fabrication of a SiC integrated single stage differential amplifier operating at temperatures up to 400 °C;

-  fabrication of top-gated graphene transistors and their characterisation at elevated temperatures;

-  development of SiC Schottky diodes with blocking voltages up to 6 kV;

-  development of SiC transistors operating at temperatures up to 500 °C;

-  development of high power SiC p-i-n diode for microwave application;

-  development of SiC Schottky diode with highest on/off current ratio;

-  demonstration of microwave oscillations generated by SiC IMPATT diode for the first time;

-  development of high voltage silicon carbide Zener diode;

-  development of low resistivity ohmic contact to 4H-SiC with p type conductivity;

-  experimental estimation of the electron saturated drift velocity in 4H-SiC;

-  demonstration of 6H-SiC pulsed diodes operating at high avalanche current density;

-  development of LEDs based on GaN p-n structures grown by hydride vapour phase epitaxy;

-  development and sustaining a small scale commercial production of pulsed Si IMPATTs operating at 140 GHz.

Dr Vasilevskiy wrote one book chapter and co-edited two books. He has published 110 papers in refereed journals (38) and conference proceedings (72). Dr Vasilevskiy is a co-inventor of 16 patents (UK, USA, Japan and Canadian) granted in the field of WBG semiconductors (6 patents in SiC device processing and 10 - in III-V nitrides).

Roles and Responsibilities

Konstantin Vassilevski is main responsible for the operation, maintenance and development of all SiC specific process tools and processes within the EECE clean room.

Qualifications

Ph.D. in Physics of Semiconductors from A. F. Ioffe Physico-Technical Institute, Russian Academy of Science, 2002. Thesis: Silicon carbide IMPATT diode.

M.Sc. in Solid State Physics from Moscow Engineering Physics Institute, 1981. Thesis: High power pulsed photo-dissociation laser.

Research Interests

Mentor:

Dr Vasilevskiy has participated in 17 research projects funded by EU, UK and USA. He acted as a Principal Investigator in four of them and as a research Co-Investigator in 2 projects.

Esteem Indicators

Member of technical and local organizing committee for the 11th European Conference on Silicon Carbide and Related Materials, Greece, 2016.

Member of the local organizing committee for the 6th European Conference on Silicon Carbide and Related Materials (ECSCRM 2006).

Invited paper "Silicon carbide diodes for microwave applications" in a special issue of International Journal of High Speed Electronics and Systems, 2005 (also re-published as a hard cover book entitled “SiC Materials and Devices”).

Invited oral presentation at International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan: 4H-SiC IMPATT Diode Fabrication and Testing.

Member of the organizing committee of the First European GaN Workshop held in the Swiss Alp village of Rigi-Kaltbad on June 2-4, 1996 (EGW-1).

Patents

1.   Semiconductor device having SiC substrate and method for manufacturing the same,
Takeo Yamamoto, Rajesh Kumar Malhan, Yuuichi Takeuchi, Konstantin Vassilevski, Nicholas Wright,
B, March 9, (2011).

2.   Method of forming an ohmic contact in wide band semiconductor,
Rajesh Kumar Malhan, Yuuichi Takeuchi, Irina Nikitina, Konstantin Vassilevski, Nicholas Wright, Alton Horsfall,
, March 3, (2010).

3.   Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide,
K. Zekentes, K. Vassilevski,
Canadian Patent No , May 5, (2009).

4.   Method of forming an ohmic contact in wide band semiconductor,
Rajesh Kumar Malhan, Yuichi Takeuchi, Irina Nikitina, Konstantin Vassilevski, Nicholas Wright, Alton Horsfall,
US Patent No , November 28, (2006).

5.  
Takeo Yamamoto, Rajesh Kumar Malhan, Yuichi Takeuchi, Nicholas Wright, Konstantin ,
Japan Patent JP 2006-344688, December 21 (2006)

6.   Malhan, Takeuchi, Nikitina, Vassilevski, Wright, Horsfall,
Japan Patent , ).

7.   III-V compound semiconductor device with an Al_xB_yIn_zGa_1-x-y-zN_1-a-bP_aAs_b non-continuous quantum dot layer,
A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski,
US Patent No , February 1, (2005).

8.   Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques,
A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski,
US Patent No , July 29, (2003).

9.   Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide,
K. Zekentes, K. Vassilievski,
US Patent No , July 29, (2003).

10. P-n heterojunction-based structures utilizing HVPE grown III-V compound layers,
A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski,
US Patent No , May 6, (2003).

11. Method for growing p-n heterojunction-based structures utilizing HVPE techniques,
A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski,
US Patent No , May 6, (2003).

12. Method for growing p-type III-V compound material utilizing HVPE techniques,
A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski,
US Patent No , April 29, (2003).

13. III-V compound semiconductor device with an Al_xB_yIn_zGa_1-x-y-zN non-continues quantum dot layer,
A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski,
US Patent No. , November 12, (2002).

14. P-n homojunction-based structures utilizing HVPE grown III-V compound layers
A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski,
US Patent No. , November 5, (2002).

15. Method for growing p-n homojunction-based structures utilizing HVPE techniques,
A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski,
US Patent No , October 29, (2002).

16. Process for producing III-V nitride pn junctions and p-i-n junctions,
Nikolaev A.E., Melnik Y.V., Vassilevski K.V., Dmitriev V.A.,
US patent No. , April 17, (2001).

• Arith F, Urresti J, Vasilevskiy K, Olsen S, Wright N, O'Neill A. . IEEE Electron Device Letters 2018, 39(4), 564-567.
• Vasilevskiy KV, Roy SK, Wood N, Horsfall AB, Wright NG. . In: 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016). 2017, Halkdiki, Greece: Trans Tech Publications Ltd.
• Lioliou G, Chan HK, Gohil T, Vassilevski KV, Wright NG, Horsfall AB, Barnett AM. . Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2016, 840, 145-152.
• Sohal HS, Vassilevski K, Jackson A, Baker SN, ONeill A. . Frontiers in Mechanical Engineering 2016, 2(3).
• Wells GH, Hunt MRC, Hopf T, Vassilevski K, Escobedo-Cousin E, Horsfall AB, Goss JP, O'Neill A. . Journal of Vacuum Science & Technology B 2015, 33(5), 051802.
• Wells GH, Hopf T, Vassilevski KV, Escobedo-Cousin E, Wright NG, Horsfall AB, Goss JP, O'Neill AG, Hunt MRC. . Applied Physics Letters 2014, 105(19), 193109.
• Hopf T, Vassilevski KV, Escobedo-Cousin E, King PJ, Wright NG, O'Neill AG, Horsfall AB, Goss JP, Wells GH, Hunt MRC. . Journal of Applied Physics 2014, 116(15), 154504.
• Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill AG, Horsfall AB, Goss JP. . Materials Science Forum 2014, 778-780, 1162-1165.
• Sohal HS, Jackson A, Jackson R, Clowry GJ, Vassilevski K, O'Neill A, Baker SN. . Frontiers in Neuroengineering 2014, 7, 10.
• Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill A, Horsfall A, Goss J, Cumpson PJ. . Journal of Applied Physics 2013, 113(11), 114309.
• Vassilevski K, Nikitina I, Horsfall AB, Wright NG, Johnson CM. . In: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. 2011, Oslo, Norway: Trans Tech Publications Ltd.
• Furnival BJD, Vassilevski K, Wright NG, Horsfall AB. . In: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. 2011, Oslo, Norway: Trans Tech Publications Ltd.
• Yamamoto T, Malhan R, Takeuchi Y, Vassilevski K, Wright N. . UK: Denso Corporation, GB2427071B, 2011, 9 March.
• Vassilevski K, Nikitina I, Horsfall AB, Wright NG, Smith AJ, Johnson CM. . In: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. 2011, Oslo, Norway: Trans Tech Publications Ltd.
• Vassilevski K, Nikitina I, Horsfall A, Wright N, Johnson C. . In: Materials Science Forum: Silicon Carbide and Related Materials. 2010, Nürnberg, Germany: Trans Tech Publications Ltd.
• Vassilevski K, Nikitina I, Horsfall A, Wright N, Johnson C. . In: Materials Science Forum: Silicon Carbide and Related Materials 2009. 2010, Nürnberg, Germany: Trans Tech Publications Ltd.
• Barker S, Vassilevski KV, Wright NG, Horsfall AB. . In: IEEE Sensors. 2010, Waikoloa, Hawaii, USA: IEEE.
• Malhan R, Takeuchi Y, Nikitina I, Vassilevski K, Wright N, Horsfall A. . Great Britain: Denso Corporation (Kariya, JP), GB2424312B, 2010, 20-09-2006.
• Wright NG, Horsfall AB, Vassilevski K. . Materials Today 2008, 11(1-2), 16-21.
• Vassilevski K, Nikitina I, Horsfall A, Wright NG, O'Neill AG, Hilton KP, Munday AG, Hydes AJ, Uren MJ, Johnson CM. . In: 6th European Conference on Silicon Carbide and Related Materials (ECSCRM 2006). 2007, 缅北禁地 upon Tyne, UK: Materials Science Forum: Trans Tech Publications Ltd.
• Lark P, Vassilevski K, Nikitina I, Phelps GJ, Horsfall AB, Wright NG. . In: 6th European Conference on Silicon Carbide and Related Materials (ECSCRM 2006). 2007, 缅北禁地 upon Tyne, UK: Materials Science Forum: Trans Tech Publications Ltd.
• Lees JE, Bassford DJ, Fraser GW, Horsfall AB, Vassilevski KV, Wright NG, Owens A. . Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2007, 578(1), 226-234.
• Vassilevski KV, Nikitina IP, Wright NG, Horsfall AB, O'Neill AG, Johnson CM. . In: 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials. 2006, Singapore: Microelectronic Engineering, Elsevier BV.
• Vassilevski K, Nikitina I, Bhatnagar P, Horsfall A, Wright N, O'Neill AG, Uren M, Hilton K, Munday A, Hydes A, Johnson CM. . In: Materials Science Forum. 2006, Pittsburgh, Pennsylvania, USA: Trans Tech Publications Ltd.
• Malhan RK, Takeuchi Y, Nikitina I, Vassilevski K, Wright N, Horsfall A. . US, 7,141,498, 28 November 2006.
• Camara N, Zekentes K, Romanov LP, Kirillov AV, Boltovets MS, Vassilevski KV, Haddad G. . IEEE Electron Device Letters 2006, 27(2), 108-110.
• Vassilevski KV. . In: Shur, M., Rumyantsev, S., Levinshtein, M, ed. SiC Materials and Devices. New Jersey; London: World Scientific Publishing, 2006, pp.195-226.
• Nikitina IP, Vassilevski KV, Horsfall AB, Wright NG, O'Neill AG, Johnson CM, Yamamoto T, Malhan RK. . Semiconductor Science and Technology 2006, 21(7), 898-905.
• Vassilevski KV, Nikitina IP, Horsfall AB, Wright NG, Johnson CM, Malhan RK, Yamamoto T. . In: Materials Science Forum. 2006, Pittsburgh, Pennsylvania, USA: Trans Tech Publications Ltd.
• Zekentes K, Camara N, Romanov L, Kirillov A, Boltovets MS, Lebedev A, Vassilevski KV. . In: Proceedings of the International Semiconductor Conference, CAS. 2005, IEEE.
• Wright NG, Vassilevski KV, Nikitina I, Horsfall AB, Johnson CM, Bhatnagar P, Tappin P. . Materials Science Forum 2005, 483-485, 613-616.
• Nikitina IP, Vassilevski KV, Wright NG, Horsfall AB, O'Neill AG, Johnson CM. . Journal of Applied Physics 2005, 97(8), 1-7.
• Nikolaev A, Melnik Y, Dmitriev V, Vassilevski K. . Gaithersburg, Maryland, US: Technologies and Devices International, Inc, 6,849,862, 2005, 18 May 2001.
• Bhatnagar P, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG. . Solid-State Electronics 2005, 49(3), 453-458.
• Vassilevski KV, Wright NG, Nikitina IP, Horsfall AB, O'Neill AG, Uren MJ, Hilton KP, Masterton AG, Hydes AJ, Johnson CM. . Semiconductor Science and Technology 2005, 20(3), 271-278.
• Blasciuc-Dimitriu C, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG. . Semiconductor Science and Technology 2005, 20(1), 10-15.
• Vassilevski K. . International Journal of High Speed Electronics and Systems 2005, 15(4), 899-930.
• Wright NG, Poolamai N, Vassilevski KV, Horsfall AB, Johnson CM. . Materials Science Forum 2004, 457-460, 1433-1436.
• Vassilevski K, Horsfall AB, Johnson CM, Wright NG. . In: 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003). 2004, Lyon, France: Materials Science Forum: Trans Tech Publications Ltd.
• Vasilevski KV, Gamuletskaya PB, Kirillov AV, Lebedev AA, Romanov LP, Smirnov VA. . Semiconductors 2004, 38(2), 237-238.
• Vassilevski KV, Zekentes K, Horsfall AB, Johnson CM, Wright NG. . In: Materials Science Forum: 10th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2004, Lyon, France: Trans Tech Publications Ltd.
• Bludov AV, Boltovets NS, Vassilevski KV, Zorenko AV, Zekentes K, Krivutsa VA, Kritskaya TV, Lebedev AA. . Technical Physics Letters 2004, 30(2), 123-125.
• Nikolaev A, Melnik Y, Dmitriev V, Vassilevski K. . US: Sanyo Electric Co., Ltd, 6,559,467, 2004, 6 May 2003.
• Vassilevski K, Hedley J, Horsfall AB, Johnson CM, Wright NG. . In: Madar, R., Camassel, J., Blanquet, E, ed. Materials Science Forum: Silicon Carbide and Related Materials 2003. Zurich-Uetikon: Trans Tech Publications Ltd, 2004, pp.925-928.
• Bludov AV, Boltovets MS, Vassilevski KV, Zorenko AV, Zekentes K, Lebedev AA, Krivutsa VA. . Materials Science Forum 2004, 457-460, 1089-1092.
• Blasciuc-Dimitriu C, Horsfall AB, Vasilevskiy KV, Johnson CM, Wright NG, O'Neill AG. . Materials Science Forum 2003, 433-436, 823-826.
• Nikolaev A, Melnik Y, Dmitriev V, Vassilevski K. . US: Technologies and Devices International, Inc, 6,599,133, 29 July 2003.
• Nikolaev A, Melnik Y, Dmitriev V, Vassilevski K. . US: Technologies and Devices International, Inc. (Silver Springs, MD), 6,559,038, 6 May 2003.
• Nikolaev A, Melnik Y, Dmitriev V, Vassilevski K. . US: Technologies and Devices International, Inc. (Silver Spring, MD), 6,555,452, 29 April 2003.
• Zekentes K, Vassilevski K. . US: Foundation for Research & Technology-Hellas (Crete,GR), 6599644, 29 July 2003.
• Vassilevski KV, Zorenko AV, Zekentes K, Tsagaraki K, Bano E, Banc C, Lebedev AA. . In: Materials Science Forum: Silicon Carbide and Related Materials 2001. 2002, Tsukuba, Japan: Trans Tech Publications Ltd.
• Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG. . IEEE Transactions on Electron Devices 2002, 49(5), 947-949.
• Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG. . Materials Science Forum 2002, 389-393(2), 1145-1148.
• Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG. . In: International Conference on Silicon Carbide and Related Materials. 2002, Tsukuba, Japan: Trans Tech Publications Ltd.
• Phelps GJ, Wright NG, Chester EG, Johnson CM, O'Neill AG, Ortolland S, Horsfall A, Vassilevski K, Gwilliam RM, Coleman PG, Burrows CP. . Applied Physics Letters 2002, 80(2), 228-230.
• Nikolaev A, Melnik Y, Dmitriev V, Vassilevski K. . US: Technologies and Devices International, Inc, 6476420, 5 November 2002.
• Zekentes K, Vassilevski K. . Canada, CA2322595, April 6, 2002.
• Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG, Gwilliam RM. . In: International Conference on Silicon Carbide and Related Materials. 2002, Tsukuba, Japan: Trans Tech Publications Ltd.
• Banc C, Bano E, Ouisse T, Vassilevski K, Zekentes K. . In: Materials Science Forum: Silicon Carbide and Related Materials 2001. 2002, Tsukuba, Japan: Trans Tech Publications Ltd.
• Vassilevski KV, Zerenko AV, Zekentes K. . Electronics Letters 2001, 37(7), 466-467.
• Vassilevski K, Zekentes K, Tsagaraki K, Constantinidis G, Nikitina I. . Materials Science & Engineering B 2001, 80(1-3), 370-373.
• Nikolaev A, Melnik Y, Vassilevski K, Dmitriev V. . Technology and Devices International, Inc, 6218269, 17-04-2001.
• Vassilevski K, Zekentes K, Bogdanova EV, Lagadas M, Zorenko A. . Materials Science Forum 2001, 353-356, 735-738.
• Vassilevski KV, Zorenko AV, Zekentes K. . In: MRS Spring Meeting. 2001, San Francisco, California, USA: Cambridge University Press.
• Vassilevski KV, Zekentes K, Zorenko AV, Romanov LP. . IEEE Electron Device Letters 2000, 21(10), 485-487.
• Vassilevski KV, Zekentes K, Rendakova SV, Nikitina IP, Babanin AI, Andreev AN. . Semiconductors 1999, 33(11), 1206-1211.
• Vassilevski KV, Constantinidis G, Papanikolaou N, Martin N, Zekentes K. . Materials Science & Engineering B 1999, 61-62, 296-300.
• K.V. Vassilevski, M.G. Rastegaeva, A.I. Babanin, I.P. Nikitina, V.A. Dmitriev. Ti/Ni ohmic contacts to n-type gallium nitride. Materials Science and Eng. B 1997, 43(1-3), 292-295.
• K.V. Vassilevski, M.G. Rastegaeva, A.I. Babanin, I.P. Nikitina, V.A. Dmitriev. Fabrication of GaN mesa structures. MRS Internet J. Nitride Semicond. Res 1996, 1, 38.
• Vassilevski K.V., Dmitriev V.A., Zorenko A.V. Silicon carbide diode operating at avalanche breakdown current density of 60 kA/cm2. Journal of Appl. Phys 1993, 74(12), 7612-7614.