缅北禁地

Background

I was born and raised in Mexico City. My background is in Electrical & Electronic Engineering, having done my first degree at the National Autonomous University of Mexico (UNAM). I specialised in microsystems engineering and signal processing, and graguated with a thesis on noise reduction for infra-red astronomical images following a one year research placement at the Astronomy Institute. Shortly after graduating in 2003, i moved to 缅北禁地 to study an MSc in Microelectronics and continued with a PhD in Semiconductor Technology,  graduating in 2008.

My current interests are related with neuroelectronic interfaces technologies, more specifically neural micro probes technologies with recording and stimulation capabilities.

My previous experience include epitaxial graphene and strained silicon/silicon-germanium technologies for electronic device applications. Other areas of expertise are semiconductor micro and nano characterisation techniques using Raman spectroscopy, atomic force microscopy (AFM), Raman-AFM integration, XPS, electrical analysis and micro-fabrication work in clean room environment. I am at home with all three phases of electronic device production: design, fabrication and characterisation, as well as data analysis and presentation.

Currently i work in a joint project between the Institute of Neuroscience and the School of Engineering which aims control epilepsy using optogenetics.

Qualifications

2004 - 2008: PhD Semiconductor Technology. 缅北禁地. Thesis: Material characterisation of strained Si/SiGe MOSFETs
2003 - 2004: MSc Microelectronics. 缅北禁地. Thesis: Impact of virtual substrate Ge composition on the series resistance of strained Si/SiGe MOSFETs
1996 - 2001: BSc Electrical & Electronic Engineering. Universidad Nacional Autónoma de México (UNAM). Thesis: Image noise reduction for an infra-red camera/spectro 

Areas of expertise

Neuroelectronic interfaces
Neural probes design and microfabrication
Semiconductor technology

Languages

Spanish, English, German, French (basic), Russian (basic).

Informal interests

Swing dance instructor

Research Interests

Design, fabrication and characterisation of electronic materials and devices, development of nanoscale physical analysis techniques. Extensive experience using atomic force microscopy (AFM), Raman spectroscopy, X-ray photo-spectroscopy (XPS) and electrical I-V, C-V and Hall measurements. Characterisation of semiconductor properties using micro-electromechanical systems based structures. Work in clean room environment: photolithography, film deposition by e-beam evaporation and sputtering, chemical etching and thermal process.

2010 - 2011: EEE8103/EEE8019 Semiconductor Device Fabrication

• Servin E, Escobedo-Cousin E. . 缅北禁地 and Mexico City: 缅北禁地 UK and T.A.C.O. Mexico City, 2017.
• Hopf T, Vassilevski K, Escobedo-Cousin E, King P, Wright NG, O'Neill AG, Horsfall AB, Goss J, Wells G, Hunt M. . Materials Science Forum 2015, 821-823, 937-940.
• Wells GH, Hunt MRC, Hopf T, Vassilevski K, Escobedo-Cousin E, Horsfall AB, Goss JP, O'Neill A. . Journal of Vacuum Science & Technology B 2015, 33(5), 051802.
• Hopf T, Vassilevski KV, Escobedo-Cousin E, King PJ, Wright NG, O'Neill AG, Horsfall AB, Goss JP, Wells GH, Hunt MRC. . Journal of Applied Physics 2014, 116(15), 154504.
• Hopf T, Vassilevski K, Escobedo-Cousin E, Wright N, O'Neill A, Horsfall A, Goss J, Barlow A, Wells G, Hunt M. . In: 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013). 2014, Miyazaki, Japan: Scientific.Net / Trans Tech Publications Inc.
• Urena F, Olsen SH, Escobedo-Cousin E, Minamisawa RA, Raskin JP. . Journal of Applied Physics 2014, 116(12), 124503.
• Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill A, Horsfall A, Goss J. . In: International Conference on Silicon Carbide and Related Materials 2013. 2014, Miyazaki, Japan: Scientific.Net.
• Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill AG, Horsfall AB, Goss JP. . Materials Science Forum 2014, 778-780, 1162-1165.
• Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill A, Horsfall A, Goss J, Cumpson PJ. . Journal of Applied Physics 2013, 113(11), 114309.
• Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill A, Horsfall A, Goss J, Cumpson P. . Materials Science Forum 2013, 740-742, 121-124.
• Escobedo-Cousin E, Vassilevski K, Nikitina I, Wright N, O'Neill A, Horsfall A, Goss J. . In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Bhaskar U, Passi V, Houri S, Escobedo-Cousin E, Olsen SH, Pardoen T, Raskin JP. . Journal of Materials Research 2012, 27(3), 571-579.
• Escobedo-Cousin E, Olsen SH, Pardoen T, Bhaskar U, Raskin JP. . Applied Physics Letters 2011, 99(24), 241906.
• Fjer M, Persson S, Escobedo-Cousin E, O'Neill AG. . IEEE Transactions on Electron Devices 2011, 58(12), 4196-4203.
• Kapoor R, Escobedo-Cousin E, Olsen SH, Bull SJ. . IEEE Transactions on Electron Devices 2011, 58(11), 4016-4023.
• Persson S, Fjer M, Escobedo-Cousin E, Olsen SH, Malm G, Wang YB, Hellstrom PE, Ostling M, O'Neill AG. . IEEE Transactions on Electron Devices 2010, 57(6), 1243-1252.
• Escobedo-Cousin E, Olsen SH, O'Neill AG, Coulson H. . Journal of Physics D: Applied Physics 2009, 42(17), 175306.
• Olsen SH, Yan L, Agaiby R, Escobedo-Cousin E, O'Neill AG, Hellström PE, Ostling M, Lyutovich K, Kasper E, Claeys C, Parker EHC. . Microelectronic Engineering 2009, 86(3), 218-223.
• Persson S, Fjer M, Escobedo-Cousin E, Malm G, Wang YB, Hellstrom PE, Ostling M, Parker EHC, Nash LJ, Majhi P, Olsen SH, O'Neill AG. . In: IEEE International Electron Devices Meeting (IEDM). 2008, San Francisco, CA: IEEE.
• Yan L, Olsen SH, Escobedo-Cousin E, O'Neill AG. . Journal of Applied Physics 2008, 103(9), 094508.
• Tsang YL, Chattopadhyay S, Uppal S, Escobedo-Cousin E, Ramakrishnan HK, Olsen SH, O'Neill AG. . IEEE Transactions on Electron Devices 2007, 54(11), 3040-3048.
• Escobedo-Cousin E, Olsen SH, O'Neill AG, Alatise OM, Agaiby RMB, Dobrosz P, Braithwaite G, Cuthbertson A, Grasby T, Parker EHC. . In: Materials REsearch Society Conference (MRS). 2007, San Francisco, USA.
• Escobedo-Cousin E, Olsen SH, Dobrosz P, Bull SJ, O'Neill AG, Coulson H, Claeys C, Loo R, Delhougne R, Caymax M. . Journal of Applied Physics 2007, 102(12), -.
• Olsen SH, Escobedo-Cousin E, Varzgar JB, Agaiby R, Seger J, Dobrosz P, Chattopadhyay S, Bull SJ, O'Neill AG, Hellstrom P-E, Edholm J, Ostling M, Lyutovich KL, Oehme M, Kasper E. . IEEE Transactions on Electron Devices 2006, 53(9), 2296-2305.
• Varzgar JB, Kanoun M, Uppal S, Chattopadhyay S, Tsang YL, Escobedo-Cousin E, Olsen SH, O'Neill AG, Hellstrom PE, Edholm J, Ostling M, Lyutovich K, Oehme M, Kasper E. . Material Science and Engineering B 2006, 135(3), 203-206.